Abstract
A study of epitaxial Bi4Ti3O12 thin films with a pre-deposited 4 nm Ba0.4Sr0.6TiO3 sublay-er on (001) MgO substrates has been performed. In the obtained heterostructures, the rotation of the Bi4Ti3O12 film unit cells by an angle of 45° relative to the MgO substrate unit cell in the inter-face plane has been observed. The Bi4Ti3O12 films contain unit cell deformations depending on the thickness of the film and the sign of the deformation changes at a thickness of ~40 nm. The switchable in-plane spontaneous polarization of Bi4Ti3O12 film at the 180° domain structure oc-curs at a film thickness of 10 nm and increases with a thickness up to 54 µC/cm2. The study of the dielectric characteristics of the films confirmed the existence of properties anisotropy in the interface plane and the effect of deformation of the unit cell on the properties of heterostruc-tures.
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