Оценка и анализ поглощённой дозы в гетероструктуре AlGaN/GaN при воздействии ионизирующих потоков радиационных полей Земли в условиях эксплуатации наноспутника

Abstract

Research of influence of ionizing radiation in the energy range of protons (from 0.1 to 400 MeV) and electrons (from 0.04 to 7 MeV) on circular sun-synchronous orbit on the radiation resistance of the AlGaN/GaN heterostructure as part of the nanosatellite on-board electronic equipment under operating conditions is carried out using physical and mathematical modeling in the stack model approximation. All calculations are based on data from the energy spectra of protons and electrons in sun-synchronous orbit provided Spenvis information system (European Space Agency). The results of calculation of integral fluxes and absorbed doses in aluminum and heterostructure were obtained. An evaluation and analysis of the radiation resistance of the heterostructure under the influence of low- and high-energy ionizing particles and their ability to function throughout the year was carried out.