Abstract
Paper present possibility of creation a neuromatrix in the form crossbar architecture on a silicon substrate is shown. Crossbar architecture in the form of a set of nanosized conductors, between which there is a layer of titanium oxide, capable of changing its conductivity under the action of the applied voltage, it is proposed to form using the method of local anodic oxidation. The results is present of the study technological parameters of the method of local anodic oxidation silicon and titanium for the implementation of the elements of this neuromatrix in the form of a memristor structures.
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