Механизмы электронного транспорта в низкоразмерных полупроводниковых структурах: обзор

Abstract

Background: Low-dimensional semiconductor structures such as quantum wells, wires, and dots have sparked widespread attention due to their distinct electron transport properties that differ dramatically from bulk materials. These characteristics are critical for advances in nanoscale electrical and optoelectronic devices. Objective: The article aims to summarize current knowledge of electron transport processes in low-dimensional semiconductor devices, focusing on the impact of reduced dimensionality on electron behaviour. Methods: A thorough literature analysis was carried out, emphasizing experimental and theoretical investigations that shed light on electron transport dynamics in quantum wells, wires, and dots. The analysis looked into scattering mechanisms, quantum confinement effects, and the significance of material composition and structure. Results: The findings show that quantum confinement produces discrete energy states that drastically change electron mobility and conductivity. Furthermore, electron scattering by phonons, contaminants, and surfaces is shown to be heavily impacted by decreased dimensionality, which either enhances or suppresses electron transport depending on the precise configuration and size of the structures. Conclusion: Low-dimensional semiconductor structures have complex electron transport behaviours that differ significantly from their bulk counterparts. Understanding these mechanisms is critical for designing and developing future electronic devices, and this overview serves as a starting point for ongoing articles on this technologically significant topic.