Создание гетероструктур зарощенного типа для СВЧ лазерных диодов

Abstract

Comprehensive physical and technological studies on the creation of mesastripe structures with a channel in the substrate and subsequent burying of the structure with a layer of zinc selenide are carry out. Planarity of heterointerfaces between the substrate and epitaxial layers is studied by electron microscopy. The atomic structure of epitaxial layers GaInAsP/InP is studied by transmission electron microscopy. The profiles of epitaxial layers of the heterostructure are analyzed by secondary ion mass spectroscopy (SIMS). Layers with required composition of In0.78Ga0.22As0.68P0.32 corresponding to a laser wavelength of 1.3 μm are obtained. A technique for creating laser diodes with a channel in the substrate, including etching of mesastripe structure and burying with a layer of zinc selenide, is developed for the first time. This technique makes it possible to create laser diodes both with an optical confinement of laser emission and with a confinement of the current flow along the laser strip. Etching of p–n junction layers between laser strips and burying with zinc selenide on the surface of etched structure are developed for the first time. This technique made it possible to create heterostructures for laser diodes operating in the microwave range up to 10 GHz by liquid phase epitaxy (LPE). The ability to create and operate laser diodes in this design and technology is shown. The current–voltage characteristics, watt–ampere characteristics, and spectral characteristics of laser diodes are investigated. Russian technology for the creation of a microwave laser diode on a heterostructure with a channel in the substrate and repeated burying with zinc selenide is proposed. The prospects of using laser diodes of mesastripe structure with a channel in the substrate and buried with a layer of zinc selenide to create fast-response devices are shown.