Abstract
The paper considers the data of measurement of electrophysical parameters of silicon pin-photodiodes after implantation of defect-forming ions and subsequent heat treatment, which open a new way to reduce the dark current and increase the output of suitable devices. The data of electrophysical measurements are compared with the results of structural studies. The efficiency of proton irradiation of the periphery of n+-p transitions to protect the surface of pin-photodiodes based on high resistance silicon was experimentally established. Optimal conditions - modes of proton irradiation and subsequent thermal annealing (E = 100+200+300 Kev, D = 21016 cm-2, T = 300С, t = 2 h), at which the formation of a surface layer with optimal characteristics for achieving minimum dark currents of photosensitive sites and the guard ring occurs. The application of these modes to serial pin-photodiodes with a depth of n+ - p-transitions 3 m allowed to reduce the dark current by an order of magnitude and increase the output of suitable devices.
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