Abstract
The paper describes the developed model of 18 GHz high-pass filter (HPF). The filter model includes models of inductors, MIM capacitors, and conductors allows for skin-effect, edge effects, substrate influence, and the influence of the substrate contacts layout. The developed model has been verified by experimental prototype of the filter, which is made in the standard process of 130 nm silicon-germanium (SiGe) BiCMOS. It has been found that the developed model has cutoff frequency, passband and stopband attenuations, and gain slope close to the experimental prototype. The recommendations of the microwave LC-filters ground conductor layout design are expressed based on developed model.
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