Структура и термоэлектрические свойства пленочных композитов на основе CoSi

Abstract

Properties of Co-Si thin films produced by thermal treatment of Co and Si layers are studied in this article. Co/Si layers were produced by chemical vapor deposition. The two-layer structure was annealed at elevated temperatures for the formation of cobalt silicide. Thermoelectric properties of the film structures were investigated in the temperature range 300-800 K. Temperature dependences of thermopower and resistivity as well as structural data indicate the formation a multilayer structure with Si-rich and Co-rich layers.