Abstract
Resistive-type structures based on gallium oxide films were studied. Ga2O3 films were obtained by radio-frequency magnetron-assisted sputtering of a β-Ga2O3 (99.9999%) target onto unheated sapphire substrates with pre-deposited platinum electrodes. The structure and phase composition of the gallium-oxide films were determined. The current–voltage characteristics of the samples without and with exposure to radiation at the wavelengths λ = 254 nm were measured. It was shown that after annealing, the photocurrent increases by an order. The absence of sensitivity of the studied structures to radiation in the visible wavelength range was experimentally confirmed.
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