Abstract
The crystal perfection of HgCdTe layers of heterostructures grown on (013)GaAs substrates with ZnTe and CdTe buffer layers and orientation rotation in the plane(angle φ) and perpendicular to the growth direction (angle θ) were studied by the method of second harmonic generation. A change in the angle φ for CdTe layers was observed depending on the orientationof the GaAs substrate and its non-monotonic change throughout thickness in the MCT layer of constant composition and graded widegap layers at its boundaries. An increase in the angle θ was observed when growing the upper graded widegap MCT layer. The absolute value of the angle θ can be used for a qualitative assessment of the crystalline perfection of the HgCdTe layers
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