전기화학적으로 산화된 투과성 베이스 전극을 갖는 수직구조 유기 트랜지스터

Abstract

Vertical organic thin film transistors (VOTFTs) are emerging electronic devices that can overcome the limitations of conventional organic thin film transistors (OTFTs) based on lateral architecture. Here, organic permeable base transistors (OPBTs) are formed with an oxide layer on the base electrode through an electrochemical process called anodization, and this oxide layer acts as a dielectric layer. Through this electrochemical method, the manufacturing process is simplified and the charge carrier transport of the VOTFT is improved. In this study, the thickness of AlOx formed by anodizing the Al electrode was calculated through the capacitance-voltage measurement of the metal-insulator-metal device, and OPBT operations were observed according to the anodizing potential and interfacial layer, respectively. In addition, we observed the specific behaviors of vertical OPBT depending on the applied potential correlations between middle base electrode and bottom collector electrode.