Abstract
To solve problems related to the study of the possibility of changing the properties of promising semiconductor materials, the mechanisms of interaction of neutron radiation with silicon isotopes are investigated. The study of this semiconductor material is especially relevant because of its widespread use in modern semiconductor technologies for the construction integrated circuits. The types of interactions of neutron radiation with matter, the main mechanisms of formation of crystal lattice defects under the influence of thermal neutrons are investigated. Random processes of interaction of thermal neutron flux with three isotopes of silicon 28Si, 29Si and 30Si are simulated. The isotope 29Si, which is most susceptible to elastic interactions, has been determined. In the case of reactions (n, γ), the isotope 28Si was the most sensitive.
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