Abstract
Inelastic-electron-tunneling spectroscopy (IETS) was used to investigate the electron states of the interfaces of Al/Al-oxide/Fe(dFe)/Al and Al/Al-oxide/Ni(dNi)/Al tunnel junctions. The conductance curves for all junctions showed a minimum around the zero-bias voltage. The IET spectra showed a strong positive peak around 4 mV, corresponding to the minimum of conductance curves, while another broad peaks was observed for junctions with dNi, dFe≥10A, The peak position was different from that assigned to the Al-O LO phonon mode observed for Al/Al-oxide/Al junctions. It was confirmed by magnetization measurements that a ferromagnetic layer was formed for films with dNi≥30A and dFe≥10A. These results were investigated in relation to the direct and inelastic tunneling process due to magnons.
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