Abstract
AbstractExperimental and theoretical studies on optical orientation and spin-dependent recombination in a semiconductor in a magnetic field under the normal incidence of circularly polarized radiation onto the sample surface are reviewed. The experiments were carried out on GaAs_1 –_ x N_ x solid solutions, in which Ga^2+ interstitial displacement defects play the role of deep paramagnetic centers responsible for spin-dependent recombination. It is established that, in the investigated materials, the hyperfine interaction of a localized electron with one nucleus of the paramagnetic center remains strong even at room temperature. The theory is compared with an experiment conducted in the steady-state excitation mode and under two-pulse pump-probe conditions. An analytical formula for spin beats in a magnetic field is derived.
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