Abstract
The article discusses the infiuence of the concentration of charge carriers on the mechanical strength of silicon wafers. Electromagnetic radiation`s research for silicon wafers has been carried out. An analysis of the experimental results showed that the intensity of electromagnetic radiation in the space surrounding the silicon wafer depends on the value of electrical conductivity. The intensity of electromagnetic radiation increases with an increase in electrical conductivity in the region (from 0.085 to 1 Ohm-1cm-1), and does not change further, up to (100 Ohm-1cm-1).
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