Abstract
The opportunity of the nonresonant phase conjugation of light (NPC) in the excited semiconductor was shown theoretical and experimental. The induced NPC of light in the visibal and infrared spectral region was detected on the ZnO epitaxial films at room temperature by nitrogen laser pumping. The dependences of the NPC signal intensity on its photon energy and on the intensity of laser pumping were investigated. This effect explanation was given: change of absorption and refraction of the light on the laser induced free carriers in the semiconductor.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
