Abstract
When studying the processes of thermal carbonization of silicon monoxide in the presence of non-stoichiometric carbon monofluoride, it was found that increasing the annealing temperature of mixtures of SiO and CFx powders in a quasiclosed volume to 1000°C and higher leads to the release of whisker-like SiC nanocrystals. The studies showed that in parallel with the known crystallization of SiC nanowires as a result of the interaction of SiO vapors with carbon monoxide, previously undescribed interaction of CO with gas-phase silicon difluoride SiF2 takes part in their formation. At temperatures below 1200°C, this reaction is dominant, making the largest contribution to the yield of SiC nanowires.
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