Новые линии в спектрах ИК люминесценции высокого разрешения монокристаллов SiC политипов 4H и 6H

Abstract

Low-temperature infrared luminescence and high-resolution absorption spectra of undoped high-quality SiC single crystals of hexagonal modifications 4H and 6H were investigated. Narrow lines with widths less than 0.2 cm^(-1) were detected, several of which were observed for the first time. It was found that some of the lines in the 4H and 6H modifications have a similar structure, however, the lines in SiC-4H are shifted to the high-energy part of the spectrum by ~ 180 cm^(-1). For the most intense quartet in the region of 1.3 μm, the energy scheme of the levels for both 4H and 6H modifications were constructed.