Abstract
The paper presents the results of studies of grown epitaxial GaSb layers by MOCVD method at a ratio of TMSb/TEGa from 1 to 50. When the ratio TMSb/TEGa=50 were grown epitaxial GaSb layers with a specific electrical resistance of 400 Ω•cm. Crystalline perfection of these layers was evaluated by several methods and remained commensurate with the quality of the used substrates.
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