Abstract
We consider the steady-state growth of a single crystal by the liquid encapsulated Czochralski method. The mathematical model accounts for heat transfer in the crystal, melt and encapsulant, radiative heat exchange between the crucible and the surrounding furnace, formation of the growth interface and the melt/encapsulant interface meniscus, release of the latent heat during the phase transition. The time history of the growth is reconstructed from a sequence of steady state calculations with decreasing melt depth. The numerical method is based on explicit interface tracking. The employed computational procedure ensures global conservation of thermal energy. The response of prototype growth system for changes in pull rate or heater temperature is examined numerically.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
