Abstract
Reduced pressure chemical vapor deposition(RPCYD) technology has been investigated for the growth of SiGe epitaxial films with two dimensional in-situ doped boron impurities. The two dimensional <TEX>$\delta$</TEX>-doped impurities can supply high mobility carriers into the channel of SiGe heterostructure MOSFETs(HMOS). Process parameters including substrate temperature, flow rate of dopant gas, and structure of epitaxial layers presented significant influence on the shape of two dimensional dopant distribution. Weak bonds of germanium hydrides could promote high incorporation efficiency of boron atoms on film surface. Meanwhile the negligible diffusion coefficient in SiGe prohibits the dispersion of boron atoms: that is, very sharp, well defined two-dimensional doping could be obtained within a few atomic layers. Peak concentration and full-width-at-half-maximum of boron profiles in SiGe could be achieved in the range of 10<TEX>$^{18}$</TEX> -10<TEX>$^{20}$</TEX> cm<TEX>$^{-3}$</TEX> and below 5 nm, respectively. These experimental results suggest that the present method is particularly suitable for HMOS devices requiring a high-precision channel for superior performance in terms of operation speed and noise levels to the present conventional CMOS technology.
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