Abstract
On the example of InP/InAsP/InP nanowires, the role of theoretical models in the photodynamics study of hybrid semiconductor structures is considered. The photodynamics of luminescence of an array of InP/InAsP/InP nanowires formed by molecular beam epitaxy on a Si (III) substrate was studied. Based on a comparison of several kinetic models, including the use of poly-exponential and stretched-exponential functions, the analysis of experimental data is carried out. Experiments were performed by excitation with laser radiation of 633 nm at room temperature. It has been shown that the luminescence decay kinetics of the InAsP nanoinsert is best described in terms of the contact quenching model. The total decay time of the excited state (radiation lifetime) of the InAsP insert was estimated at τ ~ 40 ns. The reasons for the unusually long duration of transfer of excitation from InP have been suggested.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
