Abstract
The conditions for the synthesis of silicon carbide nanoparticles in a SiH4/C2H2/Ar/He gas mixture under the action of CO2 laser radiation with a wavelength of 10.6 μm are determined. It was found that laser synthesis of SiC particles is observed when the ratio of gas flows SiH4/C2H2 is in the range of 1.6-3.2. The temperature in the region of the reaction zone was ~1400-1500°C. Silicon carbide nanoparticles ~6 nm in diameter were obtained and their composition was investigated.
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