Abstract
AbstractDoped silicon films are fabricated using diborane and phosphine as doping gases by gas-jet plasma-chemical deposition with the application of an electron beam. The influence of the dopant-gas concentration, the addition of a fluorine-containing gas, and the background pressure on the conductivity and crystalline structure of silicon layers is investigated. Boron-doped amorphous films ( a -Si:H) with a conductivity up to 5.2 × 10^–3 (Ω cm)^–1 are fabricated; when doping with phosphorus, microcrystalline silicon films ( mc -Si:H) with a crystallinity up to 70% and conductivity at a level of 1 (Ω cm)^–1 are fabricated.
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