Высокочувствительная экспрессная нелинейно-оптическая диагностика кристаллического состояния гетероструктур типа сфалерита

Abstract

Stupak M.F.1,3, Mikhailov N.N.2,3, Dvoretsky S.A.2,4, Makarov S.N.1, Yelesin A.G.1, Verhoglyad A.G.1 1 Technological Design Institute of Scientific Instrument Engineering of the Siberian Branch of the Russian Academy of Sciences (TDI SIE SB RAS), Novosibirsk, 630058, Russian, 41 2 The Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences (ISP SB RAS), Novosibirsk, 630090, etc. Akad. Lavrentieva, 13 3 Novosibirsk State University (NSU), Novosibirsk, 630090, Pirogov, 2 4 Tomsk State University (TSU), 634050, Tomsk, Etc. Lenin, 36 Tel: 7 913 948-9824, e. Mail: stupak@tdisie.nsc.ru Annotation. The characteristics of a highly sensitive express stand of non-linear-optical diagnosis of crystalline structures such as sphalerite by generation of the second harmonica are presented. The analysis of quantitative and qualitative characterization capabilities was carried out using the stand of features of crystalline parameters of layers of heteroepitaxial structures cdhHg1-xTe on substralis from GaAs with orientation (013). The results were obtained by deviations of orientation in layers from the orientation of the substrate, which arose during the epitaxy, to determine the existence of stresses. The high sensitivity of the stand revealed the presence/absence of micro-particles with a disordered crystalline structure. Experimental results of reversible modification of the "in situ" crystalline state of CdxHg1-xTe structures with short-term local radiation exposure of high power laser radiation are given. New experimental data have been presented showing that the components of the nonlineaic susceptibility tensor cxyz(w) of the crystalline structure of CdxHg1-xTe depend on composition and are an order of magnitude larger than similar components of tensor in CdTe and GaAs.