Abstract
The low-field tunnel-type magnetoresistance (MR) properties of sol-gel derived thin film deposited on different substrate have been investigated. Polycrystalline thin films were fabricated by spin-coating on substrate and that with yttria-stabilized zirconia (YSZ) buffer layer, while c-axis-oriented thim film was grown on (LAO) single crystal substrate. The full width half maximum (FWHM) of the rocking curve scan of LPMO/LAO film is . Tunnel-type MR ratio is 0.52 % in (100) film and that of (100) film is as high as 0.68 %, whereas that of LPMO/LAO(001) film is less than 0.4 % under the applied field of 500 Oe at 300 K. Well-pronounced MR hysteresis was registered with an MR peak in the vicinity of the coercive field. The low-field tunnel-type MR characteristics of thin films deposited on different substrates originates from the behavior of grain boundary properties.
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