Abstract
The identity of the mechanisms of anodic oxide films formation on silicon, silicon carbide, and silicon nitride is proved, which can be used as the basis for the General theory of anodic oxidation of these materials. The processes of galvanostatic anodic oxidation of Si, SiC and Si3N4 in the intervals of linear dependence of the formation voltage on time proceed with activation control. The limiting stages in all cases are the anodic reactions of the formation of intermediate SiO monoxide. Preference should be given to electrolytes with lower values of the potential environmental hazard criterion of the electrolyte, which have a higher degree of environmental safety.
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