Схемотехнические методы обеспечения стойкости ЭКБ к воздействию тяжёлых заряженных частиц

Abstract

The paper considers circuit engineering methods for protecting the electronic component base from the effects of heavy charged particles. One of the main methods is to increase the capacity of the device, which leads to an increase in the capacity of diffusion regions and a decrease in the frequency of single events. The structure of a capacitor is shown, which is connected to various nodes of the circuit to increase the sensitivity of the capacitance of the node. The article focuses on the method of using active RC circuits in the feedback circuit of a storage device cell. The advantages and disadvantages of the methods of using a storage device cell with internal redundancy are noted. The paper shows that the use of circuit engineering methods will provide the required level of fault and fault tolerance to the effects of heavy charged particles.