Abstract
This paper presents the results of studies of the structure and chemical composition of the surface of single-crystal silicon c-Si substrates implanted with Cu^+ ions with an energy of 40 keV and doses in the range of 3.1 · 10^15 - 1.25 · 10^17 ions/cm^2 at a current density in the ion beam of 8 μA/cm^2. Using scanning electron and probe microscopy in combination with X-ray photoelectron and Auger electron spectroscopy it was found that at the initial stage of irradiation with Cu^+ ions up to a dose of 6.25 · 10^16 ions/cm^2 Cu metal nanoparticles with an average size of 10 nm are formed in the surface layer of Si. With a further increase in the implantation dose starting from a value of 1.25 · 10^17 ions/cm^2 and higher the η-phase of copper silicide η-Cu3Si nucleates. This circumstance is due to the heating of the near-surface layer of Si substrate during its irradiation to a temperature conducive to the phase formation of η-Cu3Si.
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