ПРИМЕНЕНИЕ СКАНИРУЮЩЕЙ ЭЛЕКТРОННОЙ МИКРОСКОПИИ В РЕВЕРС-ИНЖИНИРИНГЕ ЭЛЕКТРОННОЙ КОМПОНЕНТНОЙ БАЗЫ

Abstract

The article shows the relevance of scanning electron microscopy in the problems of analysing and synthesising micro- and nanoscale structures of semiconductor devices. The aim of the article is to analyze the structure quality of semiconductor devices in integrated circuits, to restore the sequence of technological operations and reverse engineering. To achieve this goal, the following tasks are solved: dielectric and conductive structures of semiconductor devices in integrated circuits are studied, the results of measuring the linear dimensions of the semiconductor device elements are analyzed, the dustiness coefficient is calculated. The study applies the methods of a full-scale experiment, digital methods of processing graphic information. A sample of an integrated circuit manufactured using field technology is selected as the initial data; the information and measuring system is built on the basis of a KYKY 8000 scanning electron microscope with a control computer. As a result, images of the element structures of field-effect transistors in the integrated circuit are obtained, on the basis of which the dustiness coefficient is calculated. The results show that with the help of scanning electron microscopy it is possible to analyze the technology of manufacturing semiconductor devices, to determine the sequence of execution and features of technological operations, to identify the causes of product defects to optimize technological manufacturing processes.