Abstract
Based on the study of photoconductivity in GaAs / AlAs p-i-n heterostructures in the visible light range, the dominant role of the diffusion channel of photoexcited electrons from heavily doped layers in the formation of photocurrent oscillations from the bias voltage and the determining contribution of this channel to the total current through the structure is shown. A qualitative model of the transport of excited carriers is considered, which assumes the diffusion channel as the main source of photooscillations.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
