Abstract
Uncooled GaSb/GaAlAsSb photodiodes for detecting pulsed infrared radiation in the spectral range of 0.9-1.8 µm have been developed. Active GaSb layer was grown using lead as a neutral solvent in order to reduce the concentration of natural acceptors. The capacity of the photodiodes with a diameter of photosensitive area of 300 µm was 115−135 pF with no bias and 62−70 pF at U=−1.5 V. The photodiode speed of response measured using an InGaAsP/InP laser with a wavelength of 1.55 µm reached tau=42−60 ns in the photovoltaic mode. It is shown experimentally that the photodiodes can be used without cooling to detect the pulsed radiation of lasers and LEDs in the near-infrared region of the spectrum.
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