Abstract
AbstractA method for calculation of the I – V characteristic is proposed for a detector of visible and near-IR electromagnetic radiation based on artificial diamond with allowance for vertical flow of electric current. The method can be used when the free-path length of carriers in diamond is less than the scale of variations in the concentration of carriers. The method is used to determine the following detector characteristics: the dependence of current on voltage, distribution of carrier concentration, and electric potential for a particular variant of a photodetector based on polycrystalline diamond film consisting of nanosized single crystals doped with boron.
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