Abstract
The paper describes the methods of obtaining three barrier photodiode structures based on the semiconductor compounds АIIIВV and АIIВIV, their technological stages, as well as physical properties and technological features. It studies the current transport mechanism in the three-barrier photodiode Aup(AlGa)0.95In0.05As-nGaAs:O-Ag- structure determined by generation processes involving impurity levels and electron capture by impurity centres, as well as by the generation of minority carriers in the space charge region of the barriers to be blocked, in particular, three-barrier photodiode Au-рAlGaInAs-nGaAs-Ag- structures based on varying the amount of indium in the heterolayer depending on its functional purpose.
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