Abstract
It is shown that the tensoproperties of silicon with nanoclusters of manganese atoms differ significantly from the tensoproperties of conventional semiconductors. Discovered has been found that an increase in temperature and illumination significantly increases the tenso sensitivity of the material. The results obtained are explained by the change in the energy spectrum of electrons both in nanoclusters of manganese atoms and in mini-zones formed by nanoclusters in such a material.
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