Abstract
Abstract In the range of 0.1–10^6 Hz, the temperature-induced transformation of the frequency dependences of the dielectric-loss tangent tanδ( f ) as well as the Cole–Cole diagrams for undoped vanadium-dioxide films are investigated. The measurements are carried out in the temperature range T = 273–373 K. It is shown that the shape of the Cole–Cole diagrams for all films depends slightly on the temperature in the specified interval, while the frequencies f _0 corresponding to the peaks of the function tanδ( f ) increase with temperature. The thermal-hysteresis loops of the frequency positions f _0( T ) of the peaks are measured. When interpreting the data of dielectric spectroscopy, a complex equivalent electrical circuit of the sample is used; it makes it possible to detect the presence of two types of grains with different electrical properties in undoped VO_2 films. The presence of two types of grains determines the features of the semiconductor–metal phase-transition mechanism in VO_2 films.
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