Abstract
The results of studying the transport of charge carriers in GaAs structures doped with deep donor EL2 centers and acceptor levels of Cr for detectors of ionizing radiation and ultrafast photoelectric switches are presented. Three configurations of structures are investigated: p-i-n, n-i-n and p-i-p- types. The system of differential equations for the temperature of charge carriers, Poisson's equations and continuity was solved using a commercial software. It was found that the choice of the type of the barrier layer makes it possible to control the uniformity of the electric field strength in the structures. It is shown that p-i-p- type structures have the best uniformity of the electric field strength.
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