Abstract
The influence of ultraviolet radiation and a strong electric field on the current-voltage characteristic of resistive structures based on polymorphic films of gallium oxide is studied. Both types of Ga2O3 films were obtained by the method of chloride vapor-phase epitaxy on smooth and structured sapphire substrates with orientation (0001). In the same process α-Ga2O3 films were deposited on smooth substrates, and gallium oxide films, with regular structures perpendicular to the substrate, containing alternating regions of the α- and ε-phases were deposited on patterned substrate. It’s was observed, that radiation with λ = 254 nm and strong electric transfer structures from a state with low resistance to a state with high resistance. The response time to UV radiation is 5 seconds, and the recovery time less than 1 s.
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