Abstract
The effect of high energy (0.9 MeV) electron irradiation on surge currents of high-voltage 4H-SiC JBS was investigated in the microsecond range of the forward current pulses duration. With irradiation dose growth, the threshold of hole injection monotonically increases, and the base modulation level by minority carriers (holes) decreases. At = 1.5×1016 cm-2, the hole injection is not observed up to forward voltage values of ~ 30 V and forward current density j 9000 A/cm2.
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