Abstract
The results of a capacitive spectrometric study of the formation of radiation - defect complexes in diffusion silicon p + - n - n + structures under the action of 18.7 MeV protons are presented. It was found that for the A center after irradiation, the efficiency of RD formation in diffusion diodes with shallow depths of the p + layer has a nonmonotonic dependence and constitutes the main RD concentration. A mechanism is considered that explains the effect of the p + - layer depth in diffusion diodes on the defect fo rmation process.
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