Abstract
Based on the Monte Carlo algorithm, a method has been developed for calculating the energy spectrum of hot nonequilibrium electrons and holes in the track of the primary recoil atom when exposed to single fast neutrons. The calculations of the heating and subsequent relaxation of nonequilibrium charge carriers in silicon in the track of a charged particle with initial energies in the range of 50...200 keV are carried out. The characteristic temperatures of the electron and hole plasma were obtained, which amounted to 5400 K and 2700 K, respectively. The effect of radiation-induced heating of charge carriers on the failure stability of static memory elements is discussed.
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