ДОПИРОВАНИЕ НИОБАТОВ ВИСМУТА КАК ПОДХОД К ПОЛУЧЕНИЮ ВЫСОКОЭНТРОПИЙНЫХ ПИРОХЛОРОВ С ДИЭЛЕКТРИЧЕСКИМИ СВОЙСТВАМИ

Abstract

An approach to the obtaining of high-entropy compositions with the pyrochlore structure with dielectric properties based on substituted bismuth niobates is shown. A series of compositions has been synthesized, and the regions for the formation of compounds with the pyrochlore structure have been established. The optical and dielectric properties of the resulting compositions have been studied. It is shown that the samples are wide-gap semiconductors and the dielectric indices depend on the polarizability of the doped cations and the size of the agglomerates.