Abstract
In the frequency range from 30 Hz to 1 MHz, the dielectric properties of polycrystalline fullerite films with a thickness of about 300 nm, which are part of p-type Si / C60 / InGa structures, were studied under the influence of constant electric fields with a strength of up to 33 MV / m. It was found that at negative polarity of the InGa electrode, when the injection of electrons from the metal into the fullerite is facilitated, at frequencies less than 1000 Hz, an anomalous increase in the electrical capacity of the sample is observed, while the capacitance at a low frequency exceeds the capacitance at a high frequency by more than 1000 times. An explanation for this effect is proposed.
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