Abstract
Heterostructure with InGaAs/GaAs quantum well-dots was investigated in temperature range 10-300 K using photoluminescence spectroscopy in CW mode as well with time resolution. Obtained decay times were splitted into radiative and nonradiative components of carrier lifetime. It is found that radiative lifetime demonstrates exponential growth with temperature rise, while temperature dependence of nonradiative one is much weaker.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
