Подавление температурной зависимости длины волны излучения в светодиодных структурах со ступенчатым гетеропереходом II типа InAsSb/InAsSbP

Abstract

The results of a study of the electroluminescence of the asymmetric InAs/InAs1−ySby/InAsSbP LED heterostructures with a molar fraction of InSb in the ternary solid solution in the active region y=0.15 and y=0.16 in the temperature range 4.2−300 K are presented. Based on the experimental data, the formation of a staggered type II heterojunction at the InAs1−ySby/InAsSbP heterointerface was determined. The dominant contribution of the interface radiative transitions at the type II heterointerface in the temperature range 4.2−180 K was shown, which makes it possible to minimize the temperature dependence of the operating wavelength of the LEDs.