Abstract
The paper presents research results on the characteristics of Hall sensor based on the AlGaN/GaN heterostructure with various geometric parameters of the active region operating in the temperature range from –25 to 400°C. The research was performed using device-technological simulation. The active layer of the proposed structure is a two-dimensional electron gas region, which is formed between the barrier layer Al0,3Ga0,7N and the undoped GaN channel layer. The results (room temperature current-related magnetic sensitivity 66.4 V/(A•T) and very low temperature cross sensitivity of 0,0273%/°C) indicate the prospects of the proposed solutions for the practical use.
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