Abstract
Calculating, analysing and verifying current-voltage characteristics (CVC) of a silicon fast-recovery diode (FRD) are performed using the methods of instrumental-technological modelling. The article determines the planar structure configuration of a semiconductor device crystal, the levels of doping and doses of irradiation with high-energy particles, at which the required values of operating and maximum forward currents and reverse (breakdown) voltages are achieved. The main tasks to be solved in the article are to determine the optimal design and technological parameters of the fast-recovery diode (FRD) structure and verifying the calculated current-voltage characteristics (CVC) values with the experimental data taken from the SKKE310F12 fast recovery diode at various ambient temperatures. The novelty of the work is represented by the obtained verified instrumental-technological model of FRD, which is possible for industrial implementation in the form of a semiconductor device at the production base of domestic microelectronics enterprises. The results of the research can be used in producing the element base of power electronics for pulsed power converters, namely discrete FRD, FRD structures as part of power modules based on MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and IGBT transistors.
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