강유전체 박막 형성방법에 따른 용액 공정 기반 강유전체 전계효과 트랜지스터의 전기적 특성 의존성

Abstract

In manufacturing of solution-processed organic electronic devices, a spin coating method is frequently used, but which has a big problem. Solvent in a solution has a decisive effect such as physical and chemical damage for successive solution-based film deposition. Such a severe damage by solvent restricts for fabricating building blocks of multi-layered films from solutions. In this work, it will be shown that a proper combination of well-known solvents gives a chance to fabricate multi-layered film, also this new method was applied to make organic field effect transistor. Two types of bottom gate, bottom contact transistors were fabricated, one of which is fabricated by conventional single spin coating method, the other fabricated by double spin coating method. Compared with the electrical characteristics in a single spin coated transistor, the leakage current between source and gate electrode was decreased, ON state current was increased, and the extracted saturation mobility was multiplied more than 2.7 time for double spin coated transistors. It is suggested that the multiple coated gate dielectric structure is more desirable for high performance organic ferroelectric field effect transistors.