Abstract
A method based on the Fourier-transform infrared (FTIR) spectrometer has been implemented allowing infrared photoluminescence measurements with a low duty cycle of pump pulses. It reduces the uncontrolled heating of semiconductor structures by pump laser. The method was used to record the infrared photoluminescence spectra of test narrow-gap low dimensional heterostructures in the wavelength range of 1–5 μm. It was determined that for large reverse duty cycle (more then 20) the developed gated integration method has a better signal-to-noise ratio in the measured spectra compared to the traditionally used synchronous detection method (Lock-in amplification).
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