Abstract
We investigated magnetoresistance(MR) and exchange bias properties by annealing in top and bosom type spin valves (SV) with nano-oxide layers (NOL). In top SVs with NOL, MR ratio of 9.2% is obtained after postdeposition annealing at 250. In bottom SVs with NOL, MR ratio of 10.1 % is obtained after postdeposition annealing at 250. Therefore, specular reflection of the NOL in bottom SVs is higher than that of the NOL in top SVs. Exchange biasing of bottom SVs with NOL is 28% higher than that of bottom SVs without NOL after annealing. This enhancement of exchange biasing is thought to be due to the reduced magnetic moment of the pinned layer with NOL and enhanced (111) FeMn texture. ∌簀 歯獨慭ሀ鳪떭ꧬ麬駭验
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